O Map on Semiconductor Chip
An X-ray energy dispersive spectormetry map recorded using the Oxygen K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.
Image by John Mansfield
An X-ray energy dispersive spectormetry map recorded using the Oxygen K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.
Image by John Mansfield
Two grains of silicon nitride, one at an <0001> axis and the other at a nearby two beam condition. Interface is amorphous.
Image by Pan Group
A precipitate of M23X6 in a 316 stainless steeel sample. Fringes are the dislcations at the interfaces between the matrix and the precipitate.
Image by John Mansfield
An XEDS map of a semiconductor chip, green is the silicon K alpha line, yellow is the gols M alpha line and red the carbon K line.
Image by John Mansfield
An X-ray energy dispersive spectormetry map recorded using the aluminum K alpha line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.
Image by John Mansfield.
A scanning transmission electron micrograph recorded in a Dualbeam FIB of semi-coherent copper aluminum precipitates in an aluminum alloy.
Image by FEI
An X-ray energy dispersive spectormetry map recorded using the Oxygen K line. Map recorded on the FEI Quanta Dualbeam with an EDAX Apollo 40 Silicon Drift Detector.
Image by John Mansfield
The following tutorials, lectures, short courses, web course, etc. are offered by personnel in the field of microscopy from across the globe. Some are presented by people associated with the University of Michigan Electron Microbeam Analysis Laboratory, often as part of full fledged courses such as MSE-562.